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IXTH 36P10
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
TO-247 AD Outline
g fs
V DS = -10 V; I D = I D25 , pulse test
6
12
S
C iss
C oss
V GS = 0 V, V DS = -25 V, f = 1 MHz
2800
1100
pF
pF
1
2
3
C rss
t d(on)
490
35
pF
ns
t r
V GS = -10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
37
ns
t d(off)
R G = 4.7 ? (External)
65
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
28
ns
Dim.
Millimeter
Inches
Q g(on)
95
nC
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
Q gs
Q gd
V GS = -10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
27
40
nC
nC
2.2 2.54
2.2 2.6
b 1.0 1.4
.087 .102
.059 .098
.040 .055
R thJC
0.65
K/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
R thCS
0.25
K/W
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
R 4.32 5.49
S 6.15 BSC
.170 .216
242 BSC
Symbol
Test Conditions
min.
typ.
max.
I S
I SM
V SD
t rr
V GS = 0
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = I S , di/dt = 100 A/ μ s, V R = -50 V
180
-36
-144
-3
A
A
V
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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